High power terahertz quantum cascade lasers with symmetric wafer bonded active regions
High power terahertz quantum cascade lasers with symmetric wafer bonded active regions
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DOI：
10.1063/1.4826943
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发表时间：
2013-10-21
影响因子：
4
通讯作者：
Unterrainer, Karl
中科院分区：
文献类型：
--
作者：
Brandstetter, Martin;Deutsch, Christoph;Unterrainer, Karl
我们增加了太赫兹量子级联激光器的有源区/波导厚度与半绝缘表面等离子体激元波导堆叠两个对称的有源区在彼此的顶部，通过直接晶片键合技术。通过这种方式，我们提高了腔内产生的光功率和模式限制。在热沉温度为5 K，最高工作温度为122 K的条件下，单端面脉冲输出峰值功率为470 mW。此外，这些器件在420 GHz的范围内显示出以3.9 THz为中心的宽带发射光谱。(C)2013年作者。除非另有说明，否则所有文章内容均根据Creative Commons Attribution 3.0 Unported License许可。
We increased the active region/waveguide thickness of terahertz quantum cascade lasers with semi-insulating surface plasmon waveguides by stacking two symmetric active regions on top of each other, via a direct wafer bonding technique. In this way, we enhance the generated optical power in the cavity and the mode confinement. We achieved 470 mW peak output power in pulsed mode from a single facet at a heat sink temperature of 5 K and a maximum operation temperature of 122 K. Furthermore, the devices show a broad band emission spectrum over a range of 420GHz, centered around 3.9 THz. (C) 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.