Magnetic tunnel junctions prepared by ultraviolet light assisted oxidation
Magnetic tunnel junctions prepared by ultraviolet light assisted oxidation
复制标题
紫外光辅助氧化制备磁性隧道结
DOI：
10.1016/s0304-8853(99)00588-0
复制
发表时间：
2000
影响因子：
2.7
通讯作者：
P. Grünberg
中科院分区：
文献类型：
--
作者：
P. Rottländer;H. Kohlstedt;H.de Gronckel;E. Girgis;J. Schelten;P. Grünberg
首次将紫外光辅助氧化技术应用于铁磁隧道结势垒层的氧化。结果表明，这种方法可以得到面积电阻为1kΩ μ m2的高质量结，是未来磁随机存储器的关键器件。
Ultraviolet light assisted oxidation has been applied for the first time to oxidize the barriers in ferromagnetic tunnel junctions. It is shown that this method produces junctions of good quality with an area resistance of the order of 1kΩ μm2which is very attractive as the key device for future magneto random access memories.