Overbias Light Emission due to Higher-Order Quantum Noise in a Tunnel Junction
Overbias Light Emission due to Higher-Order Quantum Noise in a Tunnel Junction
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DOI：
10.1103/physrevlett.113.066801
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发表时间：
2014-08-05
影响因子：
8.6
通讯作者：
Belzig, W.
中科院分区：
文献类型：
--
作者：
Xu, F.;Holmqvist, C.;Belzig, W.
了解从原子级尖锐尖端到金属表面的隧道效应需要我们考虑纳米尺度上的相互作用。电子的非弹性隧道效应会产生光子发射，其能量直观上应受到所施加的偏置电压的限制。然而，实验[G.舒尔等人，物理学。莱特牧师。 102, 057401 (2009)]表明，涉及电子与等离子体激元相互作用的更复杂的过程导致以过偏置能量为特征的光子发射。我们提出了一个类似于动态库仑封锁的观察模型，该模型最初是为处理介观电路中的电子环境而开发的。我们通过两个电子与模拟局部等离子体激元模式的 LRC 电路相互作用的相关隧道效应定量地解释了实验结果。为了解释过偏置发射，电子隧道动力学的非高斯统计至关重要。
Understanding tunneling from an atomically sharp tip to a metallic surface requires us to account for interactions on a nanoscopic scale. Inelastic tunneling of electrons generates emission of photons, whose energies intuitively should be limited by the applied bias voltage. However, experiments [G. Schull et al., Phys. Rev. Lett. 102, 057401 (2009)] indicate that more complex processes involving the interaction of electrons with plasmon polaritons lead to photon emission characterized by overbias energies. We propose a model of this observation in analogy to the dynamical Coulomb blockade, originally developed for treating the electronic environment in mesoscopic circuits. We explain the experimental finding quantitatively by the correlated tunneling of two electrons interacting with a LRC circuit modeling the local plasmon-polariton mode. To explain the overbias emission, the non-Gaussian statistics of the tunneling dynamics of the electrons is essential.