Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate
Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate
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DOI：
10.1063/1.5024704
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发表时间：
2018-04-30
影响因子：
4
通讯作者：
Ishikawa, Yukari
中科院分区：
文献类型：
--
作者：
Usami, Shigeyoshi;Ando, Yuto;Ishikawa, Yukari
研究了GaN自支撑衬底上垂直p-n二极管中引起反向漏电流的位错。在高反向偏压下，使用发射显微镜观察到点状泄漏点。随后的阴极发光（CL）的观察显示，泄漏点与CL暗点的一部分相吻合，表明某些类型的位错造成反向泄漏。当通过KOH蚀刻在位错上形成蚀刻坑时，获得三种尺寸的蚀刻坑（大、中、小）。在这些蚀坑中，只有中等蚀坑与泄漏点重合。此外，透射电子显微镜观察显示，泄漏点下方存在纯螺旋位错。结果表明，lc纯螺位错与垂直p-n二极管的反向泄漏有关。由AIP出版社出版。
Dislocations that cause a reverse leakage current in vertical p-n diodes on a GaN free-standing substrate were investigated. Under a high reverse bias, dot-like leakage spots were observed using an emission microscope. Subsequent cathodoluminescence (CL) observations revealed that the leakage spots coincided with part of the CL dark spots, indicating that some types of dislocation cause reverse leakage. When etch pits were formed on the dislocations by KOH etching, three sizes of etch pits were obtained (large, medium, and small). Among these etch pits, only the medium pits coincided with leakage spots. Additionally, transmission electron microscopy observations revealed that pure screw dislocations are present under the leakage spots. The results revealed that lc pure screw dislocations are related to the reverse leakage in vertical p-n diodes. Published by AIP Publishing.