Improved device performance of InAs/GaAs quantum dot solar cells with GaP strain compensation layers
Improved device performance of InAs/GaAs quantum dot solar cells with GaP strain compensation layers
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DOI：
10.1063/1.2816904
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发表时间：
2007-12-10
影响因子：
4
通讯作者：
Huffaker, D. L.
中科院分区：
文献类型：
--
作者：
Laghumavarapu, R. B.;El-Emawy, M.;Huffaker, D. L.
报道了带和不带间隙应变补偿层的三层InAs/GaAs量子点太阳电池的光、电和光谱响应特性。给出了这些电池在空气质量1.5G、290 mW/cm(2)光照下的短路电流密度、开路电压和外量子效率，并与GaAs控制电池进行了比较。具有SC层的电池显示了卓越的器件质量，I-V和光谱响应测量证实了这一点。与砷化镓控制电池相比，量子点太阳能电池具有更强的光响应能力。给出了Sc层厚度对器件性能的影响。(C)2007年美国物理研究所。
We report optical, electrical, and spectral response characteristics of three-stack InAs/GaAs quantum dot solar cells with and without GaP strain compensation (SC) layers. The short circuit current density, open circuit voltage, and external quantum efficiency of these cells under air mass 1.5 G at 290 mW/cm(2) illumination are presented and compared with a GaAs control cell. The cells with SC layers show superior device quality, confirmed by I-V and spectral response measurements. The quantum dot solar cells show an extended photoresponse compared to the GaAs control cell. The effect of the SC layer thickness on device performance is also presented. (C) 2007 American Institute of Physics.