Pseudo-spin-valley coupled edge states in a photonic topological insulator.
Pseudo-spin-valley coupled edge states in a photonic topological insulator.
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DOI:
10.1038/s41467-018-05408-w
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发表时间:
2018-08-02
影响因子:
16.6
通讯作者:
Genack AZ
中科院分区:
文献类型:
--
作者:
Kang Y;Ni X;Cheng X;Khanikaev AB;Genack AZ
Pseudo-spin and valley degrees of freedom engineered in photonic analogues of topological insulators provide potential approaches to optical encoding and robust signal transport. Here we observe a ballistic edge state whose spin–valley indices are locked to the direction of propagation along the interface between a valley photonic crystal and a metacrystal emulating the quantum spin–Hall effect. We demonstrate the inhibition of inter-valley scattering at a Y-junction formed at the interfaces between photonic topological insulators carrying different spin–valley Chern numbers. These results open up the possibility of using the valley degree of freedom to control the flow of optical signals in 2D structures. Valleys in the photonic band structure provide an additional degree of freedom to engineer topological photonic structures and devices. Here, Kang et al. demonstrate that inter-valley scattering is inhibited at a Y-junction between three sections with different valley topology.
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