Low temperature deformation mechanism of semiconductor single crystal and molding of Ge microlens array by direct electrical heating
Low temperature deformation mechanism of semiconductor single crystal and molding of Ge microlens array by direct electrical heating
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DOI：
10.1063/5.0003218
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发表时间：
2020-04
期刊：
影响因子：
1.6
通讯作者：
Kai Tokuhiro;M. Okano;Satoru Hachinohe;M. Shimizu;Y. Shimotsuma;K. Miura
中科院分区：
文献类型：
--
作者：
Kai Tokuhiro;M. Okano;Satoru Hachinohe;M. Shimizu;Y. Shimotsuma;K. Miura
虽然通过直接电加热在低于其熔点（1414 °C）约600 °C的温度下使硅单晶变形已被成功证明，但其机制仍未完全阐明。本文提出了一个半导体单晶直接电加热低温变形的模型。在直接电加热过程中的热像观察表明，局部温度较高的区域，在密集的位错发生在半导体单晶的单轴压缩。这是解释的电子散射的位错导致电阻率的增加。最后，由于出现这种热点，半导体单晶的变形温度明显变低。我们还展示了一个应用，以模具的微透镜阵列组成的锗单晶的焦距为25微米。
Although deforming a silicon single crystal at a temperature of about 600 °C lower than its melting point (1414 °C) by direct electrical heating was successfully demonstrated, the mechanism has still not been fully clarified. In this paper, we propose a model for the low temperature deformation of a semiconductor single crystal by direct electrical heating. The thermographic observation during direct electrical heating reveals that the local temperature is higher at the region where dense dislocation occurred in the semiconductor single crystal by uniaxial pressing. This is interpreted in terms of the scattering of an electron by the dislocation leading to an increase in the electrical resistivity. Finally, the deformation temperature of the semiconductor single crystal apparently becomes low due to the occurrence of such hot spots. We have also demonstrated an application to mold a microlens array composed of a germanium single crystal with a focal length of 25 µm.