Cross-Section Preparation for Solder Joints and MEMS Device Using Argon Ion Beam Milling
Cross-Section Preparation for Solder Joints and MEMS Device Using Argon Ion Beam Milling
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使用氩离子束铣削制备焊点和 MEMS 器件的横截面
DOI：
10.1109/tepm.2009.2029344
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发表时间：
2009
影响因子：
--
通讯作者：
G. Pellegrini
中科院分区：
文献类型：
--
作者：
O. M. Amirmajdi;R. Ashyer;M. Clode;S. Mannan;Yunqi Wang;E. Cabruja;G. Pellegrini
机械截面抛光传统上是用于制备通过扫描电子显微镜（SEM）检查的样品的选择方法。尽管机械抛光与选择性化学蚀刻相结合可以揭示焊点微观结构的最重要特征，但可能会丢失细微的细节。一个相对较新的横截面抛光方法已经开发出使用氩离子束制备一个平坦的表面，潜在的样品损伤较小。在这项研究中，我们比较了这两种方法的横截面抛光的焊料基板夫妇，并为微妙的MEMS型结构。制备了SAC（Sn-Ag-Cu）钎料、铜基SAC钎料、镍基SAC钎料和铌基In-Sn钎料4种钎料样品。扫描电镜被用来检查抛光的样品，它被发现的功能，如金属间化合物（IMC）的内部结构更容易识别使用新技术。还发现离子束铣削技术更适合于同时观察微结构的多个方面（例如，与晶界、衬底晶体结构或共晶焊料结构相关的IMC的识别）。MEMS器件横截面只能通过离子束方法制备，因为机械抛光会造成太大的损伤。
Mechanical cross-section polishing has traditionally been the method of choice for preparing samples to be examined by scanning electron microscopy (SEM). Although mechanical polishing, allied to selective chemical etching can reveal the most important characteristics of solder joint microstructure, subtle details may be lost. A relatively new cross section polishing method has been developed using an argon ion beam to prepare a flat surface with potentially less sample damage. In this study we compare these two methods of cross section polishing for solder-substrate couples, and for delicate MEMS type structures. Four solder samples were prepared, consisting of SAC (Sn-Ag-Cu) solder, SAC solder on copper substrate, SAC solder on nickel substrate and In-Sn solder on niobium substrate. SEM was used to examine the polished samples and it was found that features such as the internal structure of intermetallic compounds (IMCs) was more readily identified using the new technique. The ion beam milling technique was also found to be more suitable for simultaneous observation of multiple aspects of microstructure (e.g., identification of IMCs in relation to grain boundaries, substrate crystal structure or the eutectic solder structure). The MEMS device cross-sections could only be prepared by the ion beam method as mechanical polishing caused too much damage.