35 nm metamorphic HEMT MMIC technology
35 nm metamorphic HEMT MMIC technology
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35 nm 变质 HEMT MMIC 技术
DOI：
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发表时间：
2008
期刊：
影响因子：
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通讯作者：
O. Ambacher
中科院分区：
文献类型：
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作者：
A. Leuther;A. Tessmann;H. Massler;R. Losch;M. Schlechtweg;M. Mikulla;O. Ambacher
研制了一种栅长为35 nm的变质型高电子迁移率晶体管(MHEMT)技术。优化后的MBE生长层序列的沟道迁移率和沟道电子密度分别高达9800 cm2/vs和6.1×1012 cm-2。为了实现2500毫秒/毫米的最大非本征跨导Gm，最大值，源极电阻被降低到0.1 OmeGamiddotmm。对于2倍10微米的器件，实现了515 GHz的FT。基于这种先进的35 nm mHEMT工艺，已经实现了非常紧凑的单级H波段放大器电路，在270 GHz处显示出超过7dB的高小信号增益。
A metamorphic high electron mobility transistor (mHEMT) technology featuring 35 nm gate length has been developed. The optimized MBE grown layer sequence has a channel mobility and a channel electron density as high as 9800 cm2/Vs and 6.1times1012 cm-2, respectively. To enable a maximum extrinsic transconductance gm, max of 2500 mS/mm the source resistance has been reduced to 0.1 Omegamiddotmm. An ft of 515 GHz was achieved for a 2 times 10 mum device. Based on this advanced 35 nm mHEMT technology very compact single-stage H-band amplifiers circuits have been realized demonstrating a high small-signal gain of more than 7 dB at 270 GHz.