Directed assembly of nanowire contacts using electrodeposition
Directed assembly of nanowire contacts using electrodeposition
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使用电沉积定向组装纳米线触点
DOI：
10.1063/1.2757609
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发表时间：
2007
影响因子：
4
通讯作者：
S. Picraux
中科院分区：
文献类型：
--
作者：
S. Ingole;P. Aella;S. Hearne;S. Picraux
报道了一种在预图案化电极上将镍触点定向组装到硅纳米线的无掩模工艺。薄 Au/Cr 电极的微阵列通过光刻形成在氧化的 Si 基板上，然后在电极之间进行电场辅助的 Si 纳米线对准。然后通过在预图案化电极上选择性电沉积将纳米线末端嵌入镍中。退火至 300°C 为通过掺杂纳米线的传输提供了良好的电接触。这种方法提供了一种并行、无掩模的方法来建立与纳米线的金属接触，而无需用于电气和机械应用的高分辨率电子束光刻。
A maskless process for the directed assembly of Ni contacts to Si nanowires on prepatterned electrodes is reported. Microarrays of thin Au∕Cr electrodes were lithographically formed on oxidized Si substrates followed by electric-field assisted alignment of Si nanowires between the electrodes. The nanowire ends were then embedded in Ni by selective electrodeposition over the prepatterned electrodes. Annealing to 300°C provided good electrical contacts for transport through the doped nanowires. This approach provides a parallel, maskless method to establish metal contacts to the nanowires without the need of high resolution electron beam lithography for electrical and mechanical applications.