Nonequilibrium carrier distribution in semiconductor photodetectors: Surface leakage channel under illumination
Nonequilibrium carrier distribution in semiconductor photodetectors: Surface leakage channel under illumination
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DOI：
10.1063/1.3457872
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发表时间：
2010-06
影响因子：
4
通讯作者：
Hao Yin;Tianxin Li;Weida Hu;Wenjuan Wang;Ning Li;Xiaoshuang Chen;W. Lu
中科院分区：
文献类型：
--
作者：
Hao Yin;Tianxin Li;Weida Hu;Wenjuan Wang;Ning Li;Xiaoshuang Chen;W. Lu
采用截面扫描电容显微术结合数值模拟方法，获得了InGaAs/InP雪崩光电二极管在光照下的非平衡载流子分布。在自然氧化的InGaAs（110）面上，负表面电荷的面密度被确定为1.85×1010 cm-2。这种表面电荷被发现负责少数空穴的积累，这导致在超过0.1 mW/cm 2的照明下的吸收区中的器件的侧壁表面处的反型层。反转深度随着激发强度的增强而沿着增大，最大可达200 nm。研究表明，半导体光电探测器在探测光激发下可能形成表面泄漏通道。
The nonequilibrium carrier distribution in an InGaAs/InP avalanche photodiode under light illumination is obtained by cross-sectional scanning capacitance microscopy combined with numerical simulation. The sheet density of negative surface charge is determined to be 1.85×1010 cm−2 on the native-oxidized InGaAs (110) face. This surface charge is found responsible for the accumulation of minority holes, which leads to an inversion layer at the sidewall surface of device in the absorption region under illumination exceeding 0.1 mW/cm2. The inversion depth increases up to 200 nm along with the enhancement of excitation intensity. This work suggests that a surface leakage channel may form in semiconductor photodetectors through detection light excitation.