Black Phosphorus Mid-Infrared Light-Emitting Diodes Integrated with Silicon Photonic Waveguides
Black Phosphorus Mid-Infrared Light-Emitting Diodes Integrated with Silicon Photonic Waveguides
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DOI：
10.1021/acs.nanolett.0c02818
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发表时间：
2020-09-09
期刊：
影响因子：
10.8
通讯作者：
Liu, Chang-Hua
中科院分区：
文献类型：
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作者：
Chang, Tian-Yun;Chen, Yueyang;Liu, Chang-Hua
基于III-V/II-VI材料的发光二极管(LED)在中红外(Mid-IR)区域提供了令人信服的性能，使其在传感方面获得了广泛的应用，包括环境监测、国防和医疗诊断。通过在硅光子芯片上异质集成中红外发射器来实现片上传感器的努力正在继续进行，但这种方法的采用受到与异质集成工艺相关的高成本和界面应变的限制。本文利用基于黑磷(BP)的范德华(VDW)异质结作为室温发光二极管。演示的器件发出线偏振光，光谱覆盖了具有重要技术意义的中红外大气窗口。此外，BP LED还显示出快速的调制速度和出色的运行稳定性。测量的峰值非本征量子效率与III-V/II-VI中红外LED相当。通过利用VDW异质结的可积性，我们进一步展示了一种硅光子波导集成的BP LED。
Light-emitting diodes (LEDs) based on III-V/II-VI materials have delivered a compelling performance in the mid-infrared (mid-IR) region, which enabled wide-ranging applications in sensing, including environmental monitoring, defense, and medical diagnostics. Continued efforts are underway to realize on-chip sensors via heterogeneous integration of mid-IR emitters on a silicon photonic chip, but the uptake of such an approach is limited by the high costs and interfacial strains, associated with the processes of heterogeneous integrations. Here, the black phosphorus (BP)-based van der Waals (vdW) heterostructures are exploited as room-temperature LEDs. The demonstrated devices emit linearly polarized light, and the spectra cover the technologically important mid-IR atmospheric window. Additionally, the BP LEDs exhibit fast modulation speed and exceptional operation stability. The measured peak extrinsic quantum efficiency is comparable to the III-V/II-VI mid-IR LEDs. By leveraging the integrability of vdW heterostructures, we further demonstrate a silicon photonic waveguide-integrated BP LED.