Bulk GaN single crystals: growth mechanism by using Li3N and Ga
Bulk GaN single crystals: growth mechanism by using Li3N and Ga
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DOI：
10.1007/s00339-003-2129-1
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发表时间：
2004
期刊：
影响因子：
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通讯作者：
W. Wang;Y. T. Song;W. Yuan;Y. Cao;X. Wu;X. L. Chen
中科院分区：
文献类型：
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作者：
W. Wang;Y. T. Song;W. Yuan;Y. Cao;X. Wu;X. L. Chen
用Li3N和Ga在更温和的条件下（800°C, 1 ~ 2 atm）生长出尺寸为1 - 4 mm的无色透明六方GaN血小板晶体。通过一系列实验结果揭示了该方法的生长机理。用光学显微镜和扫描电镜观察了氮化镓单晶的形貌。用x射线粉末衍射和拉曼散射光谱对晶体进行了表征。
Colorless transparent hexagonal GaN platelet crystals with a size of 1–4 mm have been grown under more moderate conditions (800 °C, 1∼2 atm) using Li3N and Ga. Growth mechanism of this method was revealed by a series of experiment results. The morphologies of GaN single crystals were observed with an optical microscope and a scanning electron microscope. The crystal was characterized by X-ray powder diffraction and Raman scattering spectrum.