Heterogeneous Silicon/III-V Semiconductor Optical Amplifiers
Heterogeneous Silicon/III-V Semiconductor Optical Amplifiers
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DOI：
10.1109/jstqe.2016.2593103
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发表时间：
2016-11-01
影响因子：
4.9
通讯作者：
Bowers, John E.
中科院分区：
文献类型：
--
作者：
Davenport, Michael L.;Skendzic, Sandra;Bowers, John E.
我们报道了在异质硅/III-V光子学平台上集成的高输出功率和高增益半导体光放大器。该器件为最高增益设计提供25dBm的不饱和增益，为最高输出功率设计提供14dBm的饱和输出功率。该放大结构也适用于激光器，并且可以很容易地与多种硅光子电路元件集成。这些器件适用于广泛的光子集成电路。我们给出了一种优化放大器以获得所需特性的设计方法。该放大器在异质有源区和硅波导之间采用了低损耗和低反射的过渡，我们报告了在整个测量范围内的过渡损耗低于1分贝，以及从过渡到低于1的寄生反射系数。10(-3)。
We report high output power and high-gain semiconductor optical amplifiers integrated on a heterogeneous silicon/III-V photonics platform. The devices produce 25 dB of unsaturated gain for the highest gain design, and 14 dBm of saturated output power for the highest output power design. The amplifier structure is also suitable for lasers, and can be readily integrated with a multitude of silicon photonic circuit components. These devices are useful for a wide range of photonic integrated circuits. We show a design method for optimizing the amplifier for the desired characteristics. The amplifier incorporates a low loss and low reflection transition between the heterogeneous active region and a silicon waveguide, and we report transition loss below 1 dB across the entire measurement range and parasitic reflection coefficient from the transition below 1 . 10(-3).