Effect of internal oxidation pretreatments and Si contamination on oxide-scale growth and spalling
Effect of internal oxidation pretreatments and Si contamination on oxide-scale growth and spalling
复制标题
内氧化预处理和硅污染对氧化皮生长和剥落的影响
DOI：
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发表时间：
1990
期刊：
影响因子：
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通讯作者：
J. Stringer
中科院分区：
文献类型：
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作者：
P. Hou;J. Stringer
在石英胶囊中进行的内部氧化预处理对合金的后续氧化行为有深远的影响。预氧化处理后，在1100℃下对Co-15 wt.% Cr、Co-25 wt.% Cr、Ni-25 wt.% Cr和Ni-25 wt.% Cr-1 wt.% Al试样进行了测试。即使没有内部氧化颗粒的形成，预处理后的CoCr和NiCr二元合金的氧化率也显著降低。在非Cr2O3形成的co基合金上观察到铬的选择性氧化，而在Cr2O3形成的ni基合金上，发现了基体氧化物的消除，Cr2O3生长速率的降低和更好的结垢附着力。预氧化温度大于1000℃，预处理时间越长，效果越明显。石英中硅的污染被认为是原因。
Internal oxidation pretreatments carried out in quartz capsule with a Rhines pack were found to have a profound effect on the subsequent oxidation behavior of alloys. Specimens of Co-15 wt.% Cr, Co-25 wt.% Cr, Ni-25 wt.% Cr, and Ni-25 wt.% Cr-1 wt.% Al were tested at 1100°C after pre-oxidation treatments. Even without the development of internal oxide particles, pretreated binary CoCr and NiCr alloys oxidized with significantly lower rates. Selective oxidation of chromium was observed on the non-Cr2O3-forming Co-base alloys, whereas on the Cr2O3-forming Ni-base alloys, elimination of base-metal oxide, reduction in the Cr2O3 growth rate, and better scale adhesion were found. These effects were more apparent with pre-oxidation temperatures greater than 1000°C and with longer pretreatment times. Contaimination of Si from the quartz is believed to be the cause.