Molecular beam epitaxy growth of GaAsBi using As2 and As4
Molecular beam epitaxy growth of GaAsBi using As2 and As4
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DOI：
10.1016/j.jcrysgro.2013.12.008
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发表时间：
2014-03-15
影响因子：
1.8
通讯作者：
David, John P. R.
中科院分区：
文献类型：
--
作者：
Richards, Robert D.;Bastiman, Faebian;David, John P. R.
使用As-2和As-4在一定温度范围内生长100 nm厚的GaAsBi层。Bi掺入基于室温光致发光光谱的测量表明，Bi掺入的生长温度依赖性是相同的两种作为物种和相对于Bi通量是不变的，但是，Bi掺入饱和时，生长温度足够低的Bi掺入系数达到统一。的As：Ga原子通量比，允许显着的Bi掺入是一致的两个物种后，占解吸的入射As-4原子的50%，在GaAs生长。Bi重建寿命在415摄氏度下测量的过压下的两种作为物种和真空下。的寿命是显着长于在这项工作中使用的单层生长时间，但是，结果表明，作为-2是更积极的取代铋从静态表面比作为-4。在这项工作中生长的样品的光致发光强度随Di掺入根据目前的文献，似乎是独立的作为物种。(C)2014爱思唯尔有限公司版权所有。
100 nm thick GaAsBi layers were grown at a range of temperatures using both As-2 and As-4. Measurements of Bi incorporation based on room temperature photoluminescence spectra indicate that the growth temperature dependence of Bi incorporation is the same for both As species and is invariant with respect to Bi flux; however, Bi incorporation saturates when the growth temperature is low enough for the Bi incorporation coefficient to reach unity. The As:Ga atomic flux ratios allowing significant Bi incorporation are coincident for both As species upon accounting for desorption of 50% of the incident As-4 atoms during GaAs growth. The Bi reconstruction lifetime at 415 degrees C was measured under overpressures of both As species and under vacuum. The lifetime is significantly longer than the monolayer growth time used in this work; however, results do show that As-2 is more aggressive at displacing Bi from a static surface than As-4. The photoluminescence intensities of the samples grown in this work vary with Di incorporation in accordance with current literature and appear to be independent of As species. (C) 2014 Elsevier B.V. All rights reserved.