Intrinsic nonradiative recombination in ensembles of silicon nanocrystals
Intrinsic nonradiative recombination in ensembles of silicon nanocrystals
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DOI：
10.1103/physrevb.87.035428
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发表时间：
2013-01-24
影响因子：
3.7
通讯作者：
Zacharias, M.
中科院分区：
文献类型：
--
作者：
Hartel, A. M.;Gutsch, S.;Zacharias, M.
详细研究了等离子体增强化学气相沉积制备的尺寸可控硅纳米晶(SiNC)的时间分辨光致发光(TRPL)和连续波光致发光(CWPL)随样品温度和尺寸的变化。根据T相关的TRPL测量，建立了Si NCS中辐射和非辐射衰变过程的模型。将从该模型提取的参数应用于T依赖的TRPL数据，可以很好地再现不同尺寸的Si纳米管的光致发光(PL)强度。这允许描述整个温度范围内的Si NCS的光致发光特性，并支持理论假设的正确性。此外，在假设温度激活产生非辐射路径的情况下，对非辐射衰变背后的机制的理论模型进行了详细的讨论。DOI：10.1103/PhysRevB.87.035428
A detailed time-resolved photoluminescence (TRPL) and continuous wave photoluminescence (CWPL) study as a function of the silicon nanocrystal (Si NC) size and the sample temperature is presented on size-controlled Si NCs fabricated by plasma-enhanced chemical vapor deposition. From the T-dependent TRPL measurements, a model for the radiative as well as for the nonradiative decay processes in Si NCs is established. With the fitting parameters extracted from this model applied to the T-dependent TRPL data, it is possible to reproduce the T-dependent photoluminescence (PL) intensity obtained for different Si NC sizes from CWPL measurements very well. This allows for the description of the PL properties of Si NCs over the whole temperature range and supports correctness of the theoretical assumptions. Furthermore, a detailed discussion on the basis of the theoretical model about the mechanisms behind the nonradiative decay is provided, assuming a temperature activated creation of nonradiative pathways. DOI: 10.1103/PhysRevB.87.035428