MECHANISM OF PORE FORMATION ON N-TYPE SILICON
MECHANISM OF PORE FORMATION ON N-TYPE SILICON
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DOI：
10.1149/1.2085494
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发表时间：
1991-12-01
影响因子：
3.9
通讯作者：
ZHANG, XG
中科院分区：
文献类型：
--
作者：
ZHANG, XG
报道了n型硅在HF溶液中阳极溶解形成多孔硅的形貌及其与电流-电位特性的关系。单个孔隙通常由三部分组成：孔径比体小得多的薄表层；等径主体；孔底弯曲，其曲率半径在孔尖处最小，从孔尖向孔壁逐渐增大。界面场分布的计算和i-V特性表明，阳极极化过程中电流的流动是由界面隧穿引起的。曲率的作用使弯曲孔底部的电场大大增加，而电场决定了隧道电流的大小。由于孔底曲率半径的不同，孔底的反应种类和电流密度也会发生变化。电流密度沿孔底的分布决定了孔的直径以及孔间的间距。讨论了电势、pH和掺杂浓度对多孔硅形貌的影响。
The morphology of porous silicon formed on n-type silicon by anodic dissolution in HF solution and its relation to the current-potential characteristics are reported. An individual pore generally consists of three sections: a thin surface layer with pore size much smaller than in the bulk; an equidiameter main body; and a curved pore bottom, of which the radius of curvature is the smallest at the pore tip and increases from the tip to the wall. The i-V characteristics and the calculation of the field distribution at the interface suggest that current flow during anodic polarization is caused by interface tunneling. The electric field at the curved pore bottom, which determines the tunneling current, is greatly increased due to the effect of curvature. Due to the difference in the radius of curvature along a pore bottom, the kind of reactions and the current density there also change. The distribution of the current density along the pore bottom then determines the pore diameter as well as the spacing between the pores. The effect of potential, pH, and dopant concentration on the morphology of porous silicon are also discussed.