Reversible switching of magnetic states by electric fields in nitrogenized-divacancies graphene decorated by tungsten atoms.
Reversible switching of magnetic states by electric fields in nitrogenized-divacancies graphene decorated by tungsten atoms.
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钨原子修饰的氮化二空位石墨烯中电场可逆地切换磁态
DOI：
10.1038/srep07575
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发表时间：
2014-12-19
影响因子：
4.6
通讯作者：
Wan JG
中科院分区：
文献类型：
--
作者：
Ge GX;Sun HB;Han Y;Song FQ;Zhao JJ;Wang GH;Wan JG
Magnetic graphene-based materials have shown great potential for developing high-performance electronic devices at sub-nanometer such as spintronic data storage units. However, a significant reduction of power consumption and great improvement of structural stability are needed before they can be used for actual applications. Based on the first-principles calculations, here we demonstrate that the interaction between tungsten atoms and nitrogenized-divacancies (NDVs) in the hybrid W@NDV-graphene can lead to high stability and large magnetic anisotropy energy (MAE). More importantly, reversible switching between different magnetic states can be implemented by tuning the MAE under different electric fields and very low energy is consumed during the switching. Such controllable switching of magnetic states is ascribed to the competition between the tensile stain and orbital magnetic anisotropy, which originates from the change in the occupation number of W-5d orbitals under the electric fields. Our results provide a promising avenue for developing high-density magnetic storage units or multi-state logical switching devices with ultralow power at sub-nanometer.
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影响因子：
3.7
作者：
Hobbs, D;Kresse, G;Hafner, J
通讯作者：
Hafner, J
影响因子：
2.7
作者：
Amft, Martin;Sanyal, Biplab;Skorodumova, Natalia V.
通讯作者：
Skorodumova, Natalia V.
影响因子：
3.7
作者：
NEUGEBAUER, J;SCHEFFLER, M
通讯作者：
SCHEFFLER, M
影响因子：
4
作者：
He, K. H.;Chen, J. S.;Feng, Y. P.
通讯作者：
Feng, Y. P.
影响因子：
3.7
作者：
Kresse, G;Furthmuller, J
通讯作者：
Furthmuller, J