Large bilinear magnetoresistance from Rashba spin-splitting on the surface of a topological insulator
Large bilinear magnetoresistance from Rashba spin-splitting on the surface of a topological insulator
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DOI：
10.1103/physrevb.106.l241401
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发表时间：
2022-09
影响因子：
3.7
通讯作者：
Yangchao Wang;Binbin Liu;Yue-Xin Huang;S. V. Mambakkam;Yong Wang;Shengyuan A. Yang;Xian-Lei Sheng;S. Law;J. Xiao
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文献类型：
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作者：
Yangchao Wang;Binbin Liu;Yue-Xin Huang;S. V. Mambakkam;Yong Wang;Shengyuan A. Yang;Xian-Lei Sheng;S. Law;J. Xiao
除了拓扑保护的线性色散外，在拓扑绝缘子（TIs）表面还发现了具有可调谐Rashba自旋分裂（RSS）的带弯曲约束二维电子气体与拓扑表面态共存。本文报道了在过渡金属原子修饰的bi2se3薄膜中观察到的大双线性磁电阻（BMR）。BMR的大小敏感地取决于沉积原子的类型和数量，其最大值接近于强Rashba半导体。我们的第一性原理计算再现了量子阱态，并揭示了所有具有破逆对称性的bi2se3异质结构中相当大的RSS。我们的研究结果表明，ti中通过RSS态的电荷-自旋相互转换可以通过表面原子沉积进行微调，并且很容易通过BMR检测到潜在的自旋电子应用。
In addition to the topologically protected linear dispersion, a band-bending-confined two-dimensional electron gas with tunable Rashba spin-splitting (RSS) was found to coexist with the topological surface states on the surface of topological insulators (TIs). Here, we report the observation of large bilinear magnetoresistance (BMR) in Bi 2 Se 3 films decorated with transition metal atoms. The magnitude of the BMR sensitively depends on the type and amount of atoms deposited, with a maximum achieved value close to those of strong Rashba semiconductors. Our first-principles calculations reproduce the quantum well states and reveal sizable RSS in all Bi 2 Se 3 heterostructures with broken inversion symmetry. Our results show that charge-spin interconversion through RSS states in TIs can be fine-tuned through surface atom deposition and easily detected via BMR for potential spintronic applications.