Change of Electronic Structure Induced by Magnetic Transitions in CeBi
Change of Electronic Structure Induced by Magnetic Transitions in CeBi
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DOI：
10.1143/jpsj.73.2041
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发表时间：
2004-06
影响因子：
1.7
通讯作者：
S. Kimura;M. Okuno;H. Kitazawa;F. Ishiyama;O. Sakai
中科院分区：
文献类型：
--
作者：
S. Kimura;M. Okuno;H. Kitazawa;F. Ishiyama;O. Sakai
观察到了CeBi的电子结构随温度的变化，这是由基于光学电导[σ（ω）]的两种反铁磁跃迁引起的.σ（ω）谱分别在25和11 K下连续和不连续变化。在这些温度之间，随着温度的变化，光谱中的两个峰迅速向相反的能量侧移动。通过与能带计算和理论σ（ω）谱的比较，解释了这种峰移是由于Ce 4f Γ 8和Bi 6p态之间的混合效应引起的Bi 6p能带的能量移动.单层反铁磁（+-）从顺磁状态的转变被认为是二级。11 K时σ（ω）谱的显著变化表明电子结构的变化是由单层到双层（++--）反铁磁相的一级磁相变引起的。
The temperature dependence of the electronic structure of CeBi arising from two types of antiferromagnetic transitions based on optical conductivity [σ(ω)] was observed. The σ(ω) spectrum continuously and discontinuously changes at 25 and 11 K, respectively. Between these temperatures, two peaks in the spectrum rapidly shift to the opposite energy sides as the temperature changes. Through a comparison with the band calculation as well as with the theoretical σ(ω) spectrum, this peak shift was explained by the energy shift of the Bi 6 p band due to the mixing effect between the Ce 4 f Γ 8 and Bi 6 p states. The single-layer antiferromagnetic (+-) transition from the paramagnetic state was concluded to be of the second order. The marked changes in the σ(ω) spectrum at 11 K, however, indicated the change in the electronic structure was due to a first-order-like magnetic transition from a single-layer to a double-layer (++--) antiferromagnetic phase.