Carbon nanostructures on silicon substrates suitable for nanolithography
Carbon nanostructures on silicon substrates suitable for nanolithography
复制标题
适用于纳米光刻的硅基底上的碳纳米结构
DOI：
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发表时间：
2006
期刊：
影响因子：
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通讯作者：
J. Koohsorkhi
中科院分区：
文献类型：
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作者：
Y. Abdi;S. Mohajerzadeh;H. Hoseinzadegan;J. Koohsorkhi
We report the application of vertically grown carbon nanotubes (CNTs) for submicron and nanolithography. The growth of CNTs is performed on silicon substrates using a nickel-seeded plasma-enhanced chemical vapor deposition method at a temperature of 650 °C and with a mixture of C2H2 and H2. The grown CNTs are encapsulated by a titanium-dioxide film and then mechanically polished to expose the buried nanotubes, and a plasma ashing step finalizes the process. The emission of electrons from the encapsulated nanotubes is used to write patterns on a resist-coated substrate placed opposite to the main CNT holding one. Scanning electron microscope has been used to investigate the nanotubes and the formation of nano-metric lines. Also a novel approach is presented to create isolated nanotubes from a previously patterned cluster growth.
