Irradiation-induced microstructural evolution and swelling of 3C-SiC
Irradiation-induced microstructural evolution and swelling of 3C-SiC
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DOI：
10.1016/j.jnucmat.2015.01.040
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发表时间：
2015-04
影响因子：
3.1
通讯作者：
Yan-Ru Lin;C. Ku;C. Ho;Wei‐Tsung Chuang;S. Kondo;J. Kai
中科院分区：
文献类型：
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作者：
Yan-Ru Lin;C. Ku;C. Ho;Wei‐Tsung Chuang;S. Kondo;J. Kai
在这项研究中，离子辐照单晶3C-SiC下高达20 dpa的能量密度在400-1350 °C下，使用基于同步辐射的X射线衍射和高分辨率透射电子显微镜检查。研究了3C-SiC中的间隙团、位错环、Frank环、层错环和空洞。高分辨TEM结果表明，随着温度的升高，团簇尺寸达到几nm时坍缩成{1 1 1}小环，在1000 °C时，团簇逐渐沿{1 1 1}方向发展成Frank环，并在其中加入沿着原子层。测量了400-1350 °C下的辐照诱导体积膨胀，证实了SiC的各向异性（a=B<c）膨胀行为。此外，在SiC（0 0 2）右侧还观察到一些峰，表明C+/Si+-Si<1 0 0>和/或C+/Si+-C<1 0 0>哑铃结构引起了漫散射.
In this study, an ion-irradiated single crystal 3C-SiC under fluences of up to 20 dpa at 400–1350 °C was examined using synchrotron based X-ray diffraction and high resolution transmission electron microscopy. Interstitial clusters, dislocation loops, Frank loops, stacking fault loops, and voids in 3C-SiC were investigated. The high resolution TEM results show that clusters collapsed to {1 1 1} small loops when their size reached few nm with increasing temperature, and gradually develop into Frank loops with an added atomic layer along {1 1 1} at 1000 °C.Interplanar spacing information of single crystal SiC was obtained from synchrotron XRD radial scan measurements. Irradiation-induced volume swelling at 400–1350 °C was measured, and the anisotropic (a=b<c) swelling behavior of SiC was confirmed. In addition, humps on the right side of SiC (0 0 2) were observed, which suggested that C+/Si+-Si<1 0 0> and/or C+/Si+-C<1 0 0> dumbbells gave rise to diffuse scattering.