Extremely high-efficient activation of acceptor boron introduced by ion implantation at room temperature with various doping concentrations in epitaxially synthesized diamond films by chemical vapor deposition
Extremely high-efficient activation of acceptor boron introduced by ion implantation at room temperature with various doping concentrations in epitaxially synthesized diamond films by chemical vapor deposition
复制标题
化学气相沉积外延合成金刚石薄膜中室温下不同掺杂浓度的离子注入引入的受主硼的极高效激活
DOI：
10.1063/5.0048309
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发表时间：
2021
影响因子：
3.2
通讯作者：
J. Nakata
中科院分区：
文献类型：
--
作者：
Yuhei Seki;Y. Hoshino;J. Nakata
采用微波等离子体辅助特殊化学气相沉积法在Ib型衬底上同质外延生长了纯金刚石薄膜，然后在室温下用离子注入技术掺杂B杂质原子，掺杂浓度为2 × 1017 ~ 2 × 1019 cm-3，然后在1300 °C下进行活化退火。在77 ~ 873 K的温度范围内，采用基于货车德堡法的霍尔效应测量方法，对样品的电阻率、载流子浓度、霍尔迁移率和导电载流子类型等电学性质进行了分析。因此，我们实现了良好的B掺杂CVD合成的金刚石薄膜具有低的补偿比和完美的掺杂效率，并确认p型导电在几乎所有的温度范围内的测量样品。在非常轻掺杂的金刚石，我们观察到第一个深受主能级的存在，位于附近1.85 eV的价带最大值，并提出了一种导电机制的基础上跳跃传导深受主能级。实验结果表明，该掺杂工艺可用于金刚石中不同受主浓度的高效B掺杂。不同掺杂浓度的金刚石中注入受主B的激活研究取得的巨大成功，必将推动金刚石基功率半导体器件应用的发展。
We homoepitaxially synthesized a pure diamond film on type Ib base substrates by microwave plasma-assisted special chemical vapor deposition method and then doped B impurity atoms by the ion implantation technique with various doping concentrations from 2 × 10 17 to 2 × 10 19 cm − 3 at room temperature followed by activation annealing at 1300 °C. The electrical properties of specific resistance, carrier concentration, Hall mobility, and conductive carrier type were analyzed by Hall effect measurements based on the van der Pauw method at sample temperatures from 77 to 873 K. We consequently realized excellent B-doping in the CVD-synthesized diamond film with a low compensation ratio and perfect doping efficiency and confirmed p-type conduction at almost all temperature ranges for the measured samples. In very lightly doped diamond, we observed first the existence of deep acceptor levels located near 1.85 eV with respect to the valence band maximum and proposed a conduction mechanism based on hopping conduction in deep acceptor levels. We showed the availability of this doping process to high-efficient B doping with various acceptor concentrations in diamond. The great success achieved in the activation of acceptor B implanted in diamond with various doping concentrations should definitely contribute to the progress in the application of diamond-based power semiconductor devices.