Spin-dependent tunneling junctions with AlN and AlON barriers
Spin-dependent tunneling junctions with AlN and AlON barriers
复制标题
具有 AlN 和 AlON 势垒的自旋相关隧道结
DOI：
10.1063/1.1313808
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发表时间：
2000
影响因子：
4
通讯作者：
Shan X. Wang
中科院分区：
文献类型：
--
作者：
M. Sharma;J. Nickel;T. C. Anthony;Shan X. Wang
本文报道了NiFe/AlN/NiFe和NiFe/AlON/NiFe结构的铁磁自旋相关隧穿结。Al膜经等离子体氮化和氧氮化后形成了良好的阻挡层。在室温下，观察到了高达18%的隧道磁电阻比（TMR）。该设备表现出较低的电阻面积的产品比在参考结与Al 2 O3障碍。在较高的偏置电压的TMR的退化被发现是小于在标准氧化铝结中发现的。因此，AlN和AlON可以作为SDT结中隧道势垒的替代材料。
We report on ferromagnetic spin-dependent tunneling (SDT) junctions with NiFe/AlN/NiFe and NiFe/AlON/NiFe structures. Good barriers were formed by plasma nitridation and oxy-nitridation of Al films. Tunneling magnetoresistance ratios (TMR) up to 18% were observed at room temperature. The devices exhibit lower resistance-area products than those seen in reference junctions with Al2O3 barriers. The degradation in TMR at higher bias voltages is found to be less than that found in standard alumina junctions. AlN and AlON could thus be alternate materials for the tunnel barrier in SDT junctions.