Electron trapping at the Si (111) atomic step edge
Electron trapping at the Si (111) atomic step edge
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DOI：
10.1063/1.1787162
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发表时间：
2004-08-30
影响因子：
4
通讯作者：
Hamilton, B
中科院分区：
文献类型：
--
作者：
Ishii, M;Hamilton, B
我们通过 He-Cd 激光源激发的开尔文力显微镜 (KFM) 研究了 Si (111) 晶片与其原生氧化物之间界面处的电荷分布。使用 KFM 和原子力显微镜的同步成像揭示了 Si 原子台阶边缘的优先电子捕获。没有观察到电子跳跃（>3.5 nm 半径）到邻近的捕获中心。我们还发现紫外激光照射增强了电子捕获。可见激光照射下和未照射下的捕获概率几乎相同，即。相当于紫外线照射下的40%。这些发现可以用不完全的键终止来解释。 (C) 2004 年美国物理研究所。
We have investigated the charge distribution at the interface between the Si (111) wafer and its native oxide by Kelvin force microscopy (KFM) with excitation from a He-Cd laser source. Simultaneous imaging using KFM and atomic force microscopy revealed preferential electron trapping at the Si atomic step edge. No electron hopping (>3.5 nm radius) to neighboring trapping centers was observed. We also found that the ultraviolet laser irradiation enhanced the electron trapping. The trapping probability under visible laser irradiation and that without irradiation were almost the same, viz. similar to40% of that under ultraviolet irradiation. These findings are explained in terms of incomplete bond termination. (C) 2004 American Institute of Physics.