Structural properties of GaN films grown on multilayer graphene films by pulsed sputtering
Structural properties of GaN films grown on multilayer graphene films by pulsed sputtering
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DOI：
10.7567/apex.7.085502
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发表时间：
2014-08
影响因子：
2.3
通讯作者：
J. Shon;J. Ohta;K. Ueno;A. Kobayashi;H. Fujioka
中科院分区：
文献类型：
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作者：
J. Shon;J. Ohta;K. Ueno;A. Kobayashi;H. Fujioka
采用脉冲溅射沉积法在多层石墨烯（MLG）/非晶SiO2叠层上生长GaN薄膜，并对其结构特性进行了研究。MLG上的GaN薄膜显示出高的c轴取向。此外，GaN薄膜表现出共存的锌尖晶石和纤锌矿相，但锌尖晶石相被抑制的AlN中间层的插入。的GaN薄膜的极性控制证明使用AlN中间层与表面氧化和不。这些结果表明，所提出的技术可以在MLG上制备高质量的Ga极性GaN薄膜，可用于大面积GaN基光学和电子器件。
GaN films were grown on a multilayer graphene (MLG)/amorphous SiO2 stack by pulsed sputtering deposition and their structural properties were investigated. The GaN films on MLG show high c-axis orientation. In addition, the GaN films exhibit coexisting zincblende and wurtzite phases, but the zincblende phase is suppressed by the insertion of AlN interlayers. The polarity control of the GaN films was demonstrated using AlN interlayers with and without surface oxidation. These results indicate that the proposed technique can yield high-quality Ga-polarity GaN films on MLG for potential use in large-area GaN-based optical and electronic devices.