Investigation of microstructure and magnetic properties of FePt-X films grown on MgO and STO substrates
Investigation of microstructure and magnetic properties of FePt-X films grown on MgO and STO substrates
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MgO 和 STO 基底上生长的 FePt·X 薄膜的微观结构和磁性能研究
DOI：
10.1016/j.jmmm.2015.11.060
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发表时间：
2016
影响因子：
2.7
通讯作者：
Cheng W. M.
中科院分区：
文献类型：
--
作者：
Dong K. F.;Jin F.;Mo W. Q.;Song J. L.;Cheng W. M.
在MgO和SrTiO 3衬底上制备了不同厚度的（001）织构FePt-X薄膜，并系统研究了FePt-X薄膜的微观结构和磁性能。研究表明，不同晶格失配度的衬底会导致不同的晶体织构和微结构。采用MgO衬底时，较大的失配应变会导致FePt薄膜呈岛状生长，而采用STO衬底时，可以忽略的失配应变会使薄膜形成连续的薄膜。在FePt薄膜中掺杂SiNx和C，导致FePt薄膜与MgO/STO之间的晶格失配应变增加，导致FePt薄膜形成岛状生长。在MgO衬底上生长的FePt-SiNx-C薄膜的垂直各向异性大于SrTiO 3衬底，这是由于较大的晶格失配引起的较大的应变所致。
Different thickness (001) textured FePt–X films were fabricated on MgO and SrTiO3substrates, and the microstructure and magnetic properties of FePt–X films was systematically investigated. The study showed that the substrates with different lattice mismatch resulted in different crystallographic texture and microstructure. The larger mismatch strain with using MgO substrates would cause FePt films to follow the island growth mode, and the negligible mismatch strain with using STO substrate would form continuous film. Doping SiNxand C into FePt films caused the increase of lattice mismatch strain between FePt and MgO/STO, which would induce FePt films to forming island growth. The perpendicular anisotropy of FePt–SiNx–C films grown on MgO substrate was larger than that of using SrTiO3substrate, which was attributed to the larger strain induced by larger lattice mismatch.