MECHANISM OF YELLOW LUMINESCENCE IN GAN
MECHANISM OF YELLOW LUMINESCENCE IN GAN
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DOI：
10.1143/jjap.19.2395
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发表时间：
1980-01-01
影响因子：
1.5
通讯作者：
AOKI, M
中科院分区：
文献类型：
--
作者：
OGINO, T;AOKI, M
研究了GaN黄光发光的机理。在Ga和NH3直接反应合成的微晶中观察到黄带，而在升华-重结晶法生长的针状晶体中没有观察到黄带。用碳掺杂强调黄色带。在C掺杂的GaN中观察到特征激发带。黄色带是由于从深度为25 meV的浅施主到深度为860 meV的深受主的辐射跃迁。用简单的组态坐标模型解释了特征激发带与发射带之间的关系。深受主被认为是由镓空位和取代镓位置最近邻的碳原子组成的络合物。
The mechanism of the yellow luminescence in GaN has been studied. The yellow band is observed in microcrystals synthesized from Ga and NH 3 by direct reaction, but is not observed in needle-like crystals grown by sublimation-recrystallization. Doping with carbon emphasizes the yellow band. The characteristic excitation band is observed in C-doped GaN. The yellow band is due to a radiative transition from a shallow donor with a depth of 25 meV to a deep acceptor with a depth of 860 meV. The relation between the characteristic excitation band and the emission band is interpreted by the simple configuration coordinate model. The deep acceptor is thought to be a complex consisting of a gallium vacancy and a carbon atom substituted for a nearest neighbour of the gallium sites.