Strong room‐temperature infrared emission from Er‐implanted porous Si
Strong room‐temperature infrared emission from Er‐implanted porous Si
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掺铒多孔硅的强室温红外发射
DOI：
10.1063/1.359403
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发表时间：
1995
影响因子：
3.2
通讯作者：
R. Soref
中科院分区：
文献类型：
--
作者：
F. Namavar;F. Lu;C. H. Perry;Annmarie Cremins;N. Kalkhoran;R. Soref
这种通信显示了Er注入多孔硅(Er：PSi)红光发射(峰值为1.9 eV)的室温(RT)、红外(IR)(1.54μm)强发射。在190keV下，以1015/cm~2的剂量向多孔硅、体硅和石英中注入Er，然后在相同条件下，在500 °C到900 °C的温度范围内，在氮气中退火30分钟。Er离子注入的石英和硅在650 °C退火后没有观察到RT-IR发射(尽管在900 °C退火后，石英在9K时观察到非常弱的发射)。最大的RT发射强度为1.54μm，峰值浓度为1.5×10~(20)/ ~3，在650 °C下退火，即使在500 °C下退火的Er：PSi的发光强度也是在400keV下注入Er的石英的26倍以上。在9~300K的温度范围内，Er：PSi的光致发光强度降低了约2倍，这与Er：PSi在宽禁带内的发光强度一致。
This communication demonstrates a strong, room‐temperature (RT), infrared (IR) (1.54 μm) emission from Er‐implanted red‐emitting (peaked at 1.9 eV) porous silicon (Er:PSi). Erbium was implanted into porous Si, bulk Si, and quartz with a dose of 1015/cm2 at 190 keV and annealed for 30 minutes in N2 at temperatures ranging from 500 °C to 900 °C under identical conditions. No RT IR emission was observed from Er implanted quartz and silicon after annealing at 650 °C (although after annealing at 900 °C very weak emission was observed from quartz at 9 K). The highest RT emission intensity at 1.54 μm was from Er:PSi with a peak concentration of 1.5×1020/cm3 and annealed at 650 °C. Even the luminescence intensity from Er:PSi annealed at 500 °C was 26 times higher than that observed from Er‐implanted quartz at 400 keV and annealed at 900 °C. A reduction in photoluminescence (PL) intensity of about a factor of two from Er:PSi over the 9 to 300 K temperature range was observed which is consistent with Er in wide ban...