Silver Iodide Induced Resistive Switching in CsPbI3 Perovskite-Based Memory Device
Silver Iodide Induced Resistive Switching in CsPbI3 Perovskite-Based Memory Device
复制标题
CsPbI3 钙钛矿存储器件中碘化银感应电阻开关
DOI：
10.1002/admi.201802071
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发表时间：
2019-04-09
影响因子：
5.4
通讯作者：
Cui, Yimin
中科院分区：
文献类型：
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作者：
Ge, Shuaipeng;Huang, Yunxia;Cui, Yimin
基于卤化铅钙钛矿的存储器件由于其独特的电流-电压（I-V）滞后而吸引了相当大的兴趣。本文采用聚乙烯吡咯烷酮辅助钝化方法，在完全露天条件下制备了能在空气中储存30 d的全无机CsPbI 3钙钛矿薄膜。然后，制造具有Ag/CsPbI 3/氧化铟锡的夹层结构的存储器件。从原始器件的I-V特性，活性银电极和I-离子之间的自发反应暴露在空气中的建议。此外，银电极的完全降解和AgIx的形成被证实，这也伴随着在钙钛矿膜中产生更多的碘空位（V-I）。具有AgIx层的存储器器件显示出双极阻变行为、导通/关断比（大于10（6））、非易失性、可靠性和可再现的开关性能。单元面积和温度依赖特性表明，在低阻状态下，电阻开关主要由V-I细丝控制，而在高阻状态下，热辅助跳跃。该研究为从碘化铅钙钛矿存储器件中电极退化和金属碘化物形成的方式来理解开关行为提供了新的见解，也为AgIx诱导电阻开关在CsPbI 3基存储器件中的潜在应用提供了可能。
Lead halide perovskites-based memory devices have attracted considerable interest due to their unique current-voltage (I-V) hysteresis. Herein, all-inorganic CsPbI3 perovskite film surviving 30 d of air storage is prepared by using a poly-vinylpyrrolidone-assisted passivation method under fully open-air condition. Afterwards, a memory device with a sandwich structure of Ag/CsPbI3/indium tin oxide is manufactured. From I-V characteristics of pristine device, a spontaneous reaction between the active Ag electrode and I- ions under air exposure is suggested. Furthermore, complete degradation of Ag electrode and formation of AgIx are verified, which also accompanies with generation of more iodine vacancies (V-I) in perovskite film. The memory device with AgIx layer shows a bipolar resistive switching behavior, ultrahigh ON/OFF ratio (above 10(6)), nonvolatile, reliable, and reproducible switching performance. Cell area and temperature dependent characteristics propose that the resistive switching is dominated by V-I filament in low-resistance state and thermally assisted hopping in high-resistance state. This study provides a new insight to understand switching behavior from the way of electrode degradation and metal iodide formation in lead iodide perovskites-based memory devices and also suggests a potential application for AgIx-induced resistive switching in CsPbI3-based memory device.