Modelling of electron and hole trapping in oxides
Modelling of electron and hole trapping in oxides
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DOI：
10.1088/0965-0393/17/8/084004
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发表时间：
2009-11
影响因子：
1.8
通讯作者：
A. L. Shluger;K P McKenna;P V Sushko;D. M. Ramo;A V Kimmel
中科院分区：
文献类型：
--
作者：
A. L. Shluger;K P McKenna;P V Sushko;D. M. Ramo;A V Kimmel
We critically review several examples of successful modelling of electron and hole trapping in metal oxides, which demonstrate a breadth of polaronic behaviour. The examples range from self-trapping in the perfect lattice to trapping by structural defects and impurities and illustrate the important phenomenon of charge localization. We present recent results in four different systems: nanoporous mayenite, amorphous SiO2, crystalline hafnia and MgO surfaces and interfaces. The complex nature of charge trapping and polaronic behaviour in these systems can go beyond traditional cases and illustrate the different challenges involved.
