Magnetoresistance in the Strongly Insulating Regime of GaAs Two-Dimensional Hole Systems

Magnetoresistance in the Strongly Insulating Regime of GaAs Two-Dimensional Hole Systems
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GaAs 二维空穴系统强绝缘状态下的磁阻

DOI:
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发表时间:
2006
期刊:
Physica E34
影响因子:
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通讯作者:
S.Katsumoto and Y.Iye
S.Katsumoto and Y.Iye
中科院分区:
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文献类型:
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作者:
K.Toyama;M.Ooya;T.Okamoto;Y.Hashimoto;S.Katsumoto and Y.Iye

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