Improved free-running InGaAs/InP single-photon avalanche diode detectors operating at room temperature
Improved free-running InGaAs/InP single-photon avalanche diode detectors operating at room temperature
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改进的在室温下运行的自由运行 InGaAs/InP 单光子雪崩二极管探测器
DOI：
10.1049/el.2009.1508
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发表时间：
2009
影响因子：
1.1
通讯作者：
G. Buller
中科院分区：
文献类型：
--
作者：
R. Warburton;M. Itzler;G. Buller
演示了 InGaAs/InP 单光子雪崩二极管探测器在自由运行模式下的室温操作，无需电子选通。器件结构的改进设计使得暗计数率比之前报道的要低得多。使用 1550 nm 入射波长在室温下自由运行，噪声等效功率为 1.5 10 -15 WHZ -1/2，并改善了光子定时抖动。
Room-temperature operation of InGaAs/InP single-photon avalanche diode detectors operating in free-running mode, with no electrical gating, is demonstrated. An improved design of device structure permitted significantly lower dark count rates than previously reported. Free-running operation at room temperature using an incident wavelength of 1550 nm gave a noise equivalent power of 1.5 10 -15 WHz -1/2 with improved photon timing jitter.