Investigation of the influence on graphene by using electron-beam and photo-lithography
Investigation of the influence on graphene by using electron-beam and photo-lithography
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DOI：
10.1016/j.ssc.2011.07.028
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发表时间：
2011-11-01
影响因子：
2.1
通讯作者：
De Teresa, J. M.
中科院分区：
文献类型：
--
作者：
Fan, Jiyu;Michalik, J. M.;De Teresa, J. M.
系统研究了石墨烯片经光刻处理后的拉曼光谱变化。结果发现，在涉及电子敏感和光子敏感的抗蚀剂的光刻工艺后，观察到几个拉曼峰的强度的实质性变化。这一发现与石墨烯薄片中无序的产生和杂质的引入有关。据观察，在石墨烯薄片上旋涂PMMA抗蚀剂后引起的无序不能通过丙酮去除，但可以通过退火工艺消除。AZ6624光敏抗蚀剂的使用产生非晶化的典型拉曼变化。当使用这种抗蚀剂时，即使在相同的退火工艺之后，拉曼光谱中的无序诱导的变化仍然存在，这意味着由所使用的光敏抗蚀剂引起的污染更难以消除。目前的研究结果强调了光刻工艺在石墨烯的物理性质中所发挥的重要作用，通常被认为是理所当然的。(C)2011爱思唯尔有限公司保留所有权利。
The changes in Raman spectra of graphene flakes after lithography processing are systematically investigated. It is found that substantial changes in the intensity of several Raman peaks are observed after lithography processes involving electron-sensitive and photon-sensitive resists. This finding is related to the generation of disorder and introduction of impurities in the graphene flakes. It is observed that the disorder induced after spin coating PMMA resist on the graphene flakes cannot be removed by acetone but can be eliminated by means of an annealing process. The use of the AZ6624 photo-sensitive resist produces Raman changes typical for amorphization. When using this resist, the disorder-induced changes in the Raman spectra persist even after the same annealing process, implying that the contamination caused by the used photo-sensitive resist is more difficult to eliminate. The present results emphasize the important role played by the lithography process, often taken for granted, in the physical properties of graphene. (C) 2011 Elsevier Ltd. All rights reserved.