Electrical characterization of BaTiO_3 heteroepitaxial thin films by hydrothermal synthesis
Electrical characterization of BaTiO_3 heteroepitaxial thin films by hydrothermal synthesis
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DOI：
10.1557/jmr.1999.0451
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发表时间：
1999-08
影响因子：
2.7
通讯作者：
A. Chien;X. Xu;J. Kim;J. Sachleben;J. Speck;F. Lange
中科院分区：
文献类型：
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作者：
A. Chien;X. Xu;J. Kim;J. Sachleben;J. Speck;F. Lange
用变频介电测试方法研究了在SrRuO_3单晶衬底上外延生长的赝立方BaTiO_3薄膜的电学性能。初始合成的BaTiO_3薄膜显示出450的介电常数，在10 kHz下由于在生长过程中引入的OH^-和H_2O而具有非常高的损耗（tan δ ε ~ 100%），从而导致薄膜内的迁移损耗。随着后处理热处理时间和温度的增加，观察到改善，在300 °C下热处理24 h后观察到改善的性能（ε ε = 200，tan δ = 8%）。通过傅里叶变换红外光谱、热重分析、核磁共振光谱和X射线衍射观察到的结构变化，建立了介电常数和损耗角正切的关系。
The electrical properties of hydrothermally grown epitaxial pseudocubic BaTiO_3 thin films formed on epitaxial electrode layers of SrRuO_3 on SrTiO_3 single crystal substrates have been evaluated by variable frequency dielectric testing. The initial as-synthesized BaTiO_3 film displayed a dielectric constant of 450 with very high losses (tan δ ˜ ~ 100%) at 10 kHz due to OH^− and H_2O, incorporated during growth, contributing to migration losses within the film. Improvements were seen with increasing postprocessing heat-treatment time and temperature with improved properties seen after a heat treatment at 300 °C for 24 h (ε ˜ ~ 200, tan δ ˜ ~ 8%). Relationships were established for dielectric constant and loss tangent with structural changes observed by Fourier transform infrared spectroscopy, thermal gravimetric analysis, nuclear magnetic resonance spectroscopy, and x-ray diffraction.