Demonstration of a 600-V, 60-A, bidirectional silicon carbide solid-state circuit breaker
Demonstration of a 600-V, 60-A, bidirectional silicon carbide solid-state circuit breaker
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DOI：
10.1109/apec.2011.5744620
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发表时间：
2011-03
期刊：
影响因子：
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通讯作者：
D. Urciuoli;V. Veliadis;H. Ha;V. Lubomirsky
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文献类型：
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作者：
D. Urciuoli;V. Veliadis;H. Ha;V. Lubomirsky
双向固态断路器（BDSSCB）可以在具有通过单个总线的双向电流的系统中取代机械故障保护设备，以提高过渡速度、功能性和可靠性。碳化硅，1200 V，0.1平方厘米的JFET的设计和制造的BDSSCB应用。设计了一种新型的BDSSCB门极驱动器，用于自触发温度补偿过流保护和外部触发。采用两个封装JFET模块、一个双向RCD缓冲器和一个20 μH的串联配电母线电感，在约10 μs的过渡时间内实现了双向600 V、60 A故障隔离。
Bidirectional solid-state circuit breakers (BDSSCBs) can replace mechanical fault protection devices in systems having bidirectional current flow through a single bus, for increased transition speed, functionality, and reliability. Silicon carbide, 1200-V, 0.1-cm2 JFETs were designed and fabricated for the BDSSCB application. A novel BDSSCB gate driver was developed for both self-triggered temperature-compensated over-current protection, and external triggering. Bidirectional 600-V, 60-A fault isolation was demonstrated in a transition time of approximately 10 μs with two packaged JFET modules, a bidirectional RCD snubber, and a series distribution bus inductance of 20 μH.