Temperature Coefficient of Frequency in Silicon-Based Cross-Sectional Quasi Lam e; Mode Resonators
Temperature Coefficient of Frequency in Silicon-Based Cross-Sectional Quasi Lam e; Mode Resonators
复制标题
硅基截面准拉姆的频率温度系数；
DOI：
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发表时间：
2018
期刊：
影响因子：
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通讯作者：
Hedy Fatemi
中科院分区：
文献类型：
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作者：
S. Shahraini;R. Abdolvand;Hedy Fatemi
在硅基横截面准拉梅模式 (CQLM) 中研究频率温度系数 (TCF)。这种模式在薄膜硅压电 (TPoS) 谐振器中得到了演示，并且使用 COMSOL 中针对高 n 型掺杂硅的特征频率分析对 TCF 曲线进行了建模。结果表明，指距和谐振器厚度之间的比率会影响这些谐振器的翻转温度，可以使用该模型来预测该温度。对在 40mumathbf{m}$ 厚的 SOI 基板上制造的 CQLM-TPoS 谐振器进行了表征，并确认测量的 TCF 值与预测非常一致。据报道，与 <100> 硅平面对齐的三阶 CQLM-TPoS 谐振器具有 >100°C 的相对较高转变温度，而 <110> 对应物的转变温度则为 <20°C。
Temperature coefficient of frequency (TCF) is studied in silicon-based cross-sectional quasi Lamé modes (CQLMs). Such modes are demonstrated in thin-film piezoelectric-on-silicon (TPoS) resonators and the TCF curves are modeled using eigenfrequency analysis in COMSOL for highly n-type doped silicon. It is shown that the ratio between the finger-pitch and the resonator thickness affects the turnover temperature of these resonators which could be predicted using this model. The CQLM-TPoS resonators fabricated on a $40mumathbf{m}$ thick SOI substrate, are characterized and the measured TCF values are confirmed to be in close agreement with the prediction. A relatively high turnover temperature of >100°C is reported for a third-order CQLM-TPoS resonator aligned to <100> silicon plane while a turnover temperature of <20°C is recorded for the <110> counterpart.