Growth Temperature Window and Self-Limiting Process in Sub-Atomic-Layer Epitaxy
Growth Temperature Window and Self-Limiting Process in Sub-Atomic-Layer Epitaxy
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亚原子层外延生长温度窗口和自限过程
DOI：
10.1143/jjap.35.4011
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发表时间：
1996
影响因子：
1.5
通讯作者：
Yoshiyuki Suda Yoshiyuki Suda
中科院分区：
文献类型：
--
作者：
M. Ishida;Mitsutomi Yamashita;Yoshio Nagata Yoshio Nagata;Yoshiyuki Suda Yoshiyuki Suda
我们最近提出了一种亚原子层外延 (SALE) 技术，通过该技术，Si 在 Si(001) 上从 Si2H6 逐单层生长。在该技术中，硅亚单层吸附和表面热激发交替重复，并且在每个生长循环中都获得原子级平坦的表面。在这项工作中，使用电阻衬底加热和Ar+激光照射进行热表面激发，进行了SALE生长，并对激光照射的作用以及生长条件和生长模式之间的关系进行了定量研究。结果表明，基板温度窗口为~17±4°C，该窗口的存在已被解释为 SALE 生长中的自限过程。当使用 5–7 Ω·cm p 型 Si(001) 衬底时，激光功率变化 0.2 W 会使衬底温度窗口移动~10±4°C，这与使用热分解 CVD 生长结果估计的~12°C 值相当一致，表明激光照射主要具有热效应。生长模式由表面温度控制，表面温度由Ar+激光照射和电阻加热相结合控制。
We have recently proposed a sub-atomic-layer epitaxy (SALE) technique by which Si is grown submonolayer-by-submonolayer from Si2H6 on Si(001). In this technique, Si submonolayer adsorption and surface thermal excitation are repeated alternately and an atomically flat surface is obtained in every growth cycle. In this work, SALE growth has been carried out using resistive substrate heating and Ar+ laser irradiation for the thermal surface excitation and the role of the laser irradiation and the relationship between the growth conditions and the growth mode have been quantitatively investigated. The results indicate a substrate temperature window of ∼17±4° C the presence of which has been interpreted in terms of a self-limiting process in the SALE growth. When 5–7 Ω· cm p-type Si(001) substrate is used, a change of the laser power by 0.2 W shifts the substrate temperature window by ∼10±4° C which is in reasonable agreement with the value of ∼12° C estimated using the result of thermally decomposed CVD growth, indicating that the laser irradiation has primarily a thermal effect. The growth mode is controlled by the surface temperature which is controlled by the combination of the Ar+ laser irradiation and the resistive heating.