Surface characterization of homoepitaxialυ-FeSi_2 film onυ-FeSi_2(111) substrate by X-ray photoelectron and absorption spectroscopy
Surface characterization of homoepitaxialυ-FeSi_2 film onυ-FeSi_2(111) substrate by X-ray photoelectron and absorption spectroscopy
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X射线光电子能谱和吸收光谱法表征υ-FeSi_2(111)衬底上同质外延υ-FeSi_2薄膜的表面
DOI：
10.1016/j.phpro.2011.01.043
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
他6名
中科院分区：
文献类型：
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作者：
F. Esaka;H. Yamamoto;他6名
用X射线光电子能谱（XPS）和X射线吸收谱（XAS）对在温度梯度溶液法合成的β-FeSi 2单晶上生长的β-FeSi 2薄膜进行了表面表征。在同质外延生长之前，退火以去除晶体上的原生氧化物层，诱导在表面中形成富铁硅化物。XAS谱表明，在晶体上可以生长出均匀的β-FeSi 2薄膜，并有部分富Fe硅化物形成。表面化学状态的控制对于获得高质量的同质外延膜是重要的。
Surface characterization of a homoepitaxial β- FeSi2film grown on a β- FeSi2single crystal synthesized with a temperaturegradient solution method was performed by X-ray photoelectron spectroscopy (XPS) and X-ray absorption spectroscopy (XAS). The annealing to remove native oxide layers on the crystal before homoepitaxial growth induced the formation of Fe-rich silicide in the surface. The XAS spectra confirm that the homoepitaxial β- FeSi2film can be grown on the crystal, while Fe-rich silicide is partially formed. The control of the surface chemical state is important to obtain homoepitaxial films with excellent quality.