Electrically active defects at AlN/Si interface studied by DLTS and ESR
Electrically active defects at AlN/Si interface studied by DLTS and ESR
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DOI：
10.1002/pssa.201200061
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发表时间：
2012-10-01
影响因子：
2
通讯作者：
Stesmans, Andre
中科院分区：
文献类型：
--
作者：
Simoen, Eddy;Visalli, Domenica;Stesmans, Andre
采用深能级瞬态谱（DLTS）和电子自旋共振（ESR）相结合的方法研究了AlN/Si（111）界面的电活性缺陷。它示出的深能级状态的密度不仅取决于外延沉积的热预算，但也在生长过程中建立的应变和冷却到室温（RT）时。在同一时间，扩散到200？nm厚的AlN层产生薄的结晶Si 3 N4界面层，通过透射电子显微镜（TEM）鉴定。这在Si 3 N4/Si（111）界面处产生所谓的悬挂键Pb中心。此外，在DLTS和ESR中均观察到了靠近界面的硅衬底中的电活性缺陷团的强烈演化。
A combined deep-level transient spectroscopy (DLTS) and electron spin resonance (ESR) study is performed to identify the electrically active defects at the AlN/Si (111) interface. It is shown that the density of deep-level states not only depends on the thermal budget of the epitaxial deposition but also on the strain built up during growth and upon cooling to room temperature (RT). At the same time, diffusion of Si into the 200?nm thick AlN layer produces a thin crystalline Si3N4 interfacial layer, identified by transmission electron microscopy (TEM). This gives rise to so-called dangling bond Pb centres at the Si3N4/Si (111) interface. In addition, a strong evolution of the electrically active defect clusters in the silicon substrate close to the interface has been observed both in DLTS and ESR.