Influence of Thermal Annealing Treatment on the Luminescence Properties of Dilute GaNAs–Bismide Alloy
Influence of Thermal Annealing Treatment on the Luminescence Properties of Dilute GaNAs–Bismide Alloy
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DOI：
10.1143/jjap.46.l764
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发表时间：
2007-08
影响因子：
1.5
通讯作者：
G. Feng;K. Oe;M. Yoshimoto
中科院分区：
文献类型：
--
作者：
G. Feng;K. Oe;M. Yoshimoto
研究了分子束外延生长的非掺杂GaN0.014As0.954Bi0.032/GaAs结构的生长后退火热处理效果。对于生长的GaN0.014As0.954Bi0.032薄膜，室温光致发光(PL)光谱显示出较差的发射效率。生长后退火可显著提高发光强度。最佳的退火温度为∼70 0°C，退火态GaN0.0 14As0.954Bi0.0 32的发光峰也发生蓝移，最大值为∼2 7meV。在高分辨X射线衍射仪的基础上，研究了GaN0.014As0.954Bi0.032PL峰在退火过程中蓝移的机制。
We have investigated the effect of postgrowth thermal annealing on undoped GaN0.014As0.954Bi0.032/GaAs structures grown by molecular-beam epitaxy. For the as-grown GaN0.014As0.954Bi0.032 film, the room-temperature photoluminescence (PL) spectrum shows poor emission efficiency. The PL intensity can be markedly improved by postgrowth annealing. The optimal annealing temperature is found to be ∼700 °C. A blueshift of the PL peak during annealing was also observed in annealed GaN0.014As0.954Bi0.032 with a maximum value of ∼27 meV. On the basis of high-resolution X-ray diffraction measurements, the mechanism for the blueshift of the GaN0.014As0.954Bi0.032 PL peak during annealing was studied.