Surface plasmon enhanced spontaneous emission rate of InGaN/GaN quantum wells probed by time-resolved photoluminescence spectroscopy
Surface plasmon enhanced spontaneous emission rate of InGaN/GaN quantum wells probed by time-resolved photoluminescence spectroscopy
复制标题
DOI：
10.1063/1.2010602
复制
发表时间：
2005-08-15
影响因子：
4
通讯作者：
Kawakami, Y
中科院分区：
文献类型：
--
作者：
Okamoto, K;Niki, I;Kawakami, Y
我们观察到的InGaN/GaN量子阱（QW）在440 nm的自发辐射率增加了32倍，采用表面等离子体（SP）探测的时间分辨光致发光光谱。我们探索这种显着的增强的发射速率和强度产生的有效的能量转移，从电子空穴对复合的量子阱中的电子振动的SP在金属涂覆的表面的半导体异质结构。这种QW-SP耦合有望导致一类新的超亮和高速发光二极管（LED），为传统荧光灯管提供现实的替代品。(C)2005年美国物理学会。
We observed a 32-fold increase in the spontaneous emission rate of InGaN/GaN quantum well (QW) at 440 nm by employing surface plasmons (SPs) probed by time-resolved photoluminescence spectroscopy. We explore this remarkable enhancement of the emission rates and intensities resulting from the efficient energy transfer from electron-hole pair recombination in the QW to electron vibrations of SPs at the metal-coated surface of the semiconductor heterostructure. This QW-SP coupling is expected to lead to a new class of super bright and high-speed light-emitting diodes (LEDs) that offer realistic alternatives to conventional fluorescent tubes. (C) 2005 American Institute of Physics.