Improvement of High-Temperature Stability of Al₂O₃/Pt/ZnO/Al₂O₃ Film Electrode for SAW Devices by Using Al₂O₃ Barrier Layer.
Improvement of High-Temperature Stability of Al₂O₃/Pt/ZnO/Al₂O₃ Film Electrode for SAW Devices by Using Al₂O₃ Barrier Layer.
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DOI：
10.3390/ma10121377
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发表时间：
2017-12-01
期刊：
影响因子：
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通讯作者：
Wei M
中科院分区：
文献类型：
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作者：
Liu X;Peng B;Zhang W;Zhu J;Liu X;Wei M
为了开发用于恶劣高温环境下声表面波（SAW）器件的薄膜电极，采用激光分子束外延（LMBE）技术在150 °C下制备了Al 2 O3/Pt/ZnO/Al 2 O3多层膜电极。第一Al 2 O3层被用作阻挡层，以防止Ga、La和Si原子从La 3Ga 5SiO 14（LGS）衬底扩散到膜电极，从而改善ZnO和Pt膜的结晶质量。结果表明，Al 2 O3/Pt/ZnO/Al 2 O3电极的电阻在1150 °C以下基本不变，表明该电极在恶劣的高温环境下具有较高的可靠性。通过分析Al 2 O3/Pt/ZnO/Al 2 O3薄膜电极的微观结构，探讨了其高温电阻稳定的机理。Al_2O_3/Pt/ZnO/Al_2O_3薄膜电极在高温声表面波器件中具有很大的应用潜力。
In order to develop film electrodes for the surface acoustic wave (SAW) devices operating in harsh high-temperature environments, novel Al2O3/Pt/ZnO/Al2O3 multilayered film electrodes were prepared by laser molecular beam epitaxy (LMBE) at 150 °C. The first Al2O3 layer was used as a barrier layer to prevent the diffusion of Ga, La, and Si atoms from the La3Ga5SiO14 (LGS) substrate to the film electrode and thus improved the crystalline quality of ZnO and Pt films. It was found that the resistance of the Al2O3/Pt/ZnO/Al2O3 electrode did not vary up to a temperature of 1150 °C, suggesting a high reliability of electrode under harsh high-temperature environments. The mechanism of the stable resistance of the Al2O3/Pt/ZnO/Al2O3 film electrodes at high temperature was investigated by analyzing its microstructure. The proposed Al2O3/Pt/ZnO/Al2O3 film electrode has great potential for application in high-temperature SAW devices.