AlGaN/GaN heterostructure field-effect transistors on single-crystal bulk AlN
AlGaN/GaN heterostructure field-effect transistors on single-crystal bulk AlN
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DOI：
10.1063/1.1555282
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发表时间：
2003-02-24
影响因子：
4
通讯作者：
Schowalter, LJ
中科院分区：
文献类型：
--
作者：
Hu, X;Deng, J;Schowalter, LJ
我们报告的AlGaN/GaN/AlN异质结场效应晶体管（HFET）的性能略有偏离C轴，单晶体AlN衬底上生长。这些设备的直流和射频特性与半绝缘SiC上生长的HFET相当。结果表明，AlN衬底适合于制作高功率微波AlGaN/GaN晶体管。(C)2003年，美国物理学会。
We report on the performance of AlGaN/GaN/AlN heterostructure field-effect transistors (HFETs) grown over slightly-off c-axis, single-crystal, bulk AlN substrates. Dc and rf characteristics of these devices were comparable to HFETs grown on semi-insulating SiC. The obtained results demonstrate that bulk AlN substrates are suitable for fabricating high-power microwave AlGaN/GaN transistors. (C) 2003 American Institute of Physics.