T.Matsuura, K.Suzue, J.Murota, Y.Sawada, and T.Ohmi: "Fractional Atomic-Layr Etching of Si by Self-Limited Adsorption of Chlorine Radicals and Molecules with Alternated Low-Energy Ar^+ Irradiation" Digest of the 7th International MicroProcess Conference,
T.Matsuura, K.Suzue, J.Murota, Y.Sawada, and T.Ohmi: "Fractional Atomic-Layr Etching of Si by Self-Limited Adsorption of Chlorine Radicals and Molecules with Alternated Low-Energy Ar^+ Irradiation" Digest of the 7th International MicroProcess Conference,
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T.Matsuura、K.Suzue、J.Murota、Y.Sawada 和 T.Ohmi：“通过交替低能 Ar^ 辐照对氯自由基和分子进行自限吸附来进行 Si 的分数原子层蚀刻”文摘
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