Field-induced resistive switching in metal-oxide interfaces
Field-induced resistive switching in metal-oxide interfaces
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DOI：
10.1063/1.1768305
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发表时间：
2004-07-12
影响因子：
4
通讯作者：
Jacobson, AJ
中科院分区：
文献类型：
--
作者：
Tsui, S;Baikalov, A;Jacobson, AJ
我们研究了电脉冲驱动的钙钛矿型氧化物中的极性相关的场致电阻开关现象。我们的数据表明，这种转换是一种常见的现象，仅限于熔敷金属电极和氧化物之间的界面层。我们通过阻抗谱确定了界面层厚度不超过10 nm，并且开关伴随着与电荷积累相关的小的电容增加。基于界面I-V特性和对电阻温度依赖性的测量，我们提出了一种场产生的晶体缺陷机制，这种机制对器件来说是可控的，驱动了开关。(C)2004年美国物理研究所。
We investigate the polarity-dependent field-induced resistive switching phenomenon driven by electric pulses in perovskite oxides. Our data show that the switching is a common occurrence restricted to an interfacial layer between a deposited metal electrode and the oxide. We determine through impedance spectroscopy that the interfacial layer is no thicker than 10 nm and that the switch is accompanied by a small capacitance increase associated with charge accumulation. Based on interfacial I-V characterization and measurement of the temperature dependence of the resistance, we propose that a field-created crystalline defect mechanism, which is controllable for devices, drives the switch. (C) 2004 American Institute of Physics.