Porous III-V compounds as nonlinear optical materials
Porous III-V compounds as nonlinear optical materials
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作为非线性光学材料的多孔 III-V 族化合物
DOI：
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发表时间：
2003
期刊：
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通讯作者：
H. Föll
中科院分区：
文献类型：
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作者：
I. Tiginyanu;I. Kravetsky;S. Langa;G. Marowsky;J. Monecke;H. Föll
电化学蚀刻是一种独特的方法来剪裁III-V化合物的线性和非线性光学性质。我们证明了在规定的蚀刻条件下，形成了横向尺寸小于100 nm的均匀分布的孔。孔隙的存在改变了材料的折射率，并且在平行取向下，引起了人造的光学各向异性，这在光学传输研究中得到了证明。孔隙和骨架实体的小尺寸显示了多孔样品的光学均匀性。含三角棱镜孔的GaP多孔膜的二次谐波增强是由巨大的三阶电场波动引起的。推导了SHG相匹配角与孔隙度的关系。
Electrochemical etching is shown to represent a unique approach for tailoring linear and nonlinear optical properties of III-V compounds. We demonstrate that under defined etching conditions uniformly distributed pores with transverse dimensions less than 100 nm are formed. The presence of pores modifies the refractive index of the materials and, with parallel orientation, induces an artificial optical anisotropy, as evidenced by optical transmission studies. Small dimensions of both pore and skeleton entities are shown to provide the optical homogeneity of the porous specimens. The enhanced optical second harmonic generation (SHG) inherent to porous membranes of GaP containing triangular-prism like pores is attributed to giant third order electric field fluctuations. The dependence of the SHG phase matching angle upon the degree of porosity is deduced.