A fully-integrated SOI CMOS complex-impedance detector for matching network tuning in LTE power amplifier
A fully-integrated SOI CMOS complex-impedance detector for matching network tuning in LTE power amplifier
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DOI：
10.1109/rfic.2017.7969005
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发表时间：
2017-06
期刊：
影响因子：
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通讯作者：
D. Nicolas;A. Serhan;A. Giry;T. Parra;E. Mercier
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文献类型：
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作者：
D. Nicolas;A. Serhan;A. Giry;T. Parra;E. Mercier
本文介绍了一种适用于自适应功率放大器负载调谐系统的宽动态范围、高精度复阻抗检测器。该探测器IC采用130 nm SOI工艺制造，在2.5V电源电压下功耗为7 mA。由于其可变衰减器系统，它可以处理输入功率从0 dBm到40 dBm的LTE信号。系统级测量表明，该检测器在2：1~6：1电压驻波比范围内对失配负载阻抗值具有很好的检测精度。
This paper describes a wide dynamic-range and accurate complex-impedance detector for adaptive power amplifier load tuning systems. The detector IC, fabricated in a 130 nm SOI technology, consumes 7mA under 2.5V supply voltage. It can handle LTE signals with an input power from 0 dBm up to 40 dBm thanks to its variable attenuator system. System level measurements show that the detector has a very good accuracy in sensing the mismatched load impedance value in the VSWR region from 2∶1 to 6∶1.