Analysis of low‐temperature data of Hall‐effect measurements on p‐type InP using a small‐polaron theory
Analysis of low‐temperature data of Hall‐effect measurements on p‐type InP using a small‐polaron theory
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DOI：
10.1002/pssc.201600217
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发表时间：
2016-12
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影响因子：
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通讯作者：
Y. Kajikawa
中科院分区：
文献类型：
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作者：
Y. Kajikawa
Benzaquen等人报道的掺杂Cd、Zn或Mg的p型InP霍尔效应测量的低温数据表现出杂质能带中的最近邻希望传导特性，并在包括价带和杂质带的双能带模型内进行了分析。结果表明，基于小极化子理论，假设跳跃漂移迁移率表示为 μib = μib0(T0/T)3/2exp(−T0/T) 和跳跃霍尔因子表示为 Aib = (kBT/J)exp(−T0H/T)，可以很好地拟合温度相关的霍尔效应数据。特别是，通过假设希望传导的负霍尔效应，可以很好地再现在低温下在掺镁 InP 中观察到的霍尔效应符号异常。结合上、下杂质哈伯德带之间的重叠讨论了希望传导的霍尔系数的符号。 （© 2016 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
The low-temperature data of Hall-effect measurements on p-type InP doped with Cd, Zn, or Mg reported by Benzaquen et al., which exhibit the characteristic of nearest-neighbor hoping conduction in an impurity band, have been analyzed within the two-band model including the valence band and the impurity band. It is shown that the temperature-dependent Hall-effect data can be well fitted by assuming the hopping drift mobility expressed as μib = μib0(T0/T)3/2exp(−T0/T) and the hopping Hall factor expressed as Aib = (kBT/J)exp(−T0H/T) on the basis of a small-polaron theory. Especially, Hall-effect sign anomaly observed at low temperature in Mg-doped InP is well reproduced by assuming a negative Hall effect for hoping conduction. The sign of the Hall coefficient for hoping conduction is discussed in connection with the overlap between the upper and the lower impurity Hubbard bands. (© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)